Cryogenic magnetic device more particularly for logic component or memory
US12046268B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 11, 2022 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Sep 6, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A cryogenic magnetic device includes a free layer having a free magnetisation and a magnetic anisotropy favouring the orientation of the free magnetisation according to a first orientation or a second orientation, the magnetic anisotropy being defined by an energy barrier separating the first orientation and the second orientation, the amplitude of the energy barrier being less than 6300 kB, the free layer having a Gilbert damping factor comprised between 0.02 and 0.4; a tunnel barrier extending in contact with the free layer; and a system configured to apply a voltage pulse through the tunnel barrier so as to reduce the amplitude of the energy barrier and switch the free magnetisation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.