Patent · US Active

Semiconductor device

US12046668B2 · kind B2 · utility

0Cited by
3References
12Claims
0Family size

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Key dates

Filing dateSep 12, 2022
Grant dateJul 23, 2024
Priority date
Expiry dateJan 27, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/01
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor device includes: a drain electrode including a plurality of drain finger parts; a source electrode including a plurality of source finger parts and a Kelvin source part electrically connected with the source finger parts; a sense electrode positioned between a drain finger part and the Kelvin source part, which are next to each other in a particular direction; and a gate electrode positioned between a drain finger part and a source finger part, which are next to each other in the particular direction, and between a drain finger part and the sense electrode, which are next to each other in the particular direction. The sense electrode and the Kelvin source part are electrically connected via a sense resistance due to a spacing between the sense electrode and the Kelvin source part in the particular direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.