Patent · US Active

Ferroelectric capacitors and methods of fabrication

US12048165B2 · kind B2 · utility

0Cited by

0References

16Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Nazila Haratipour · Hillsboro, US
Sou-Chi Chang · Portland, US
Shriram Shivaraman · Hillsboro, US
I-Cheng Tung · Hillsboro, US
Tobias Brown-Heft · Portland, US
Devin Merrill · McMinnville, US
Che-Yun Lin · Beaverton, US
Seung Hoon Sung · Beaverton, US
Jack T. Kavalieros · Portland, US
Uygar E. Avci · Portland, US
Matthew V. Metz · Portland, US

Key dates

Filing date	Jun 26, 2020
Grant date	Jul 23, 2024
Priority date	—
Expiry date	Aug 6, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10B53/20
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An integrated circuit capacitor structure, includes a first electrode includes a cylindrical column, a ferroelectric layer around an exterior sidewall of the cylindrical column and a plurality of outer electrodes. The plurality of outer electrodes include a first outer electrode laterally adjacent to a first portion of an exterior of the ferroelectric layer and a second outer electrode laterally adjacent to a second portion of the exterior of the ferroelectric layer, wherein the second outer electrode is above the first outer electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.