Method of fabricating magneto-resistive random access memory (MRAM)
US12048250B2 · kind B2 · utility
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Key dates
| Filing date | Apr 15, 2021 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Aug 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells by chemical reaction. The metal components are then removed by chemical reaction.
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