PN-body-tied field effect transistors

US12051723B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Aaron D. Lilak · Beaverton, US
• Kerryann Marrietta Foley · Portland, US
• Sayed Hasan · Portland, US
• Patrick Morrow · Portland, US
• Willy Rachmady · Beaverton, US

Key dates

• Filing date: Dec 18, 2019
• Grant date: Jul 30, 2024
• Expiry date: Oct 7, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6757

Abstract

Disclosed herein are PN-body-tied field effect transistors (PNBTFETs), as well as related devices and methods. In some embodiments, an integrated circuit (IC) structure may include: a fin including a channel region, a contact region, and an intermediate region between the contact region and the channel region, wherein the channel region includes a dopant of a first type, the intermediate region includes a dopant of a second type different from the first type, and the contact region includes a dopant of the first type; a gate that at least partially wraps around the channel region; and a conductive contact in contact with the contact region.