PMOS high-k metal gates

US12051734B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Srinivas Gandikota · Santa Clara, US
• Steven C. H. Hung · Sunnyvale, US
• Mandyam Sriram · Beaverton, US
• Jacqueline S. Wrench · San Jose, US
• Yixiong Yang · San Jose, US
• Yong Yang · Boston, US

Key dates

• Filing date: Dec 7, 2022
• Grant date: Jul 30, 2024
• Expiry date: Dec 7, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.