Bottom fed sublimation bed for high saturation efficiency in semiconductor applications
US12054825B2 · kind B2 · utility
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6References
16Claims
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Key dates
| Filing date | Jun 22, 2021 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Jul 3, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4482
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.