Method to predict yield of a device manufacturing process
US12055904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2019 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Jun 27, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.