Embedded three-dimensional electrode capacitor

US12057386B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Wei Qian · Torrance, US
• Cung D. Tran · Newburgh, US
• Sungbong Park · Suneung-ri, KR
• John Heck · Berkeley, US
• Mark Isenberger · Corrales, US
• Seth M. Slavin · Albuquerque, US
• Mengyuan Huang · Cupertino, US
• Kelly Christopher Magruder · Albuquerque, US
• Harel Frish · Kiryat Gat, IL
• Reece Defrees · Rio Rancho, US
• Zhi Li · 流花街道, CN

Key dates

• Filing date: Sep 17, 2020
• Grant date: Aug 6, 2024
• Expiry date: Dec 5, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.