Electronic imaging detector with thermal conduction layer
US12057515B2 · kind B2 · utility
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3References
10Claims
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Key dates
| Filing date | Dec 22, 2020 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Mar 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/195
Abstract
A solid state active pixel image sensor for back illumination by an electron beam is described. The image sensor comprises a thermal conduction layer for heat removal. The image sensor may also comprise a thinned silicon substrate on which an epitaxial layer is formed. The substrate may also be completely removed before or after application of the thermal conduction layer. The thermal conduction layer may comprise a metal, a metal compound, silicon, diamond or graphite.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.