Film forming method and system
US12060640B2 · kind B2 · utility
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2References
8Claims
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Key dates
| Filing date | Dec 17, 2020 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Dec 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32779
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film forming method includes forming a thin film by executing a plurality of cycles each including supplying a raw material gas to a substrate, supplying a reaction gas capable of reacting with the raw material gas to the substrate, and processing the substrate with deuterium plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.