Integrated circuit interconnect structures with air gaps
US12062611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2022 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Feb 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece having an interconnect structure that includes a first conductive feature, a second conductive feature disposed beside the first conductive feature, and an inter-level dielectric disposed between the first conductive feature and the second conductive feature. A conductive material of an etch stop layer is selectively deposited on the first conductive feature and on the second conductive feature without depositing the conductive material on the inter-level dielectric, and the inter-level dielectric is removed to form a gap between the first conductive feature and the second conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.