Dielectric materials, capacitors and memory arrays

US12062688B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Richard Beeler · Butler, US
• Matthew N. Rocklein · Boise, US
• Timothy A. Quick · Boise, US
• An-Jen B. Cheng · Boise, US
• Sumeet C. Pandey · Boise, US

Key dates

• Filing date: Apr 21, 2021
• Grant date: Aug 13, 2024
• Expiry date: Jul 17, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

Some embodiments include dielectric material having a first region containing HfO and having a second region containing ZrO, where the chemical formulas indicate primary constituents rather than specific stoichiometries. The first region contains substantially no Zr, and the second region contains substantially no Hf. Some embodiments include capacitors having a first electrode, a second electrode, and a dielectric material between the first and second electrodes. The dielectric material includes one or more first regions and one or more second regions. The first region(s) contain(s) Hf and substantially no Zr. The second region(s) contain(s) Zr and substantially no Hf. Some embodiments include memory arrays.