Inventor · Boise, ID, US

Matthew N. Rocklein

36Patents
5h-index
40Co-inventors
65Inventor score

Filing activity: Mar 22, 2010 → Jan 13, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8288811B2 Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses Electricity 23 Active
US9231206B2 Methods of forming a ferroelectric memory cell Electricity 17 Active
US9460770B1 Methods of operating ferroelectric memory cells, and related ferroelectric memory cells Physics 16 Active
US10192605B2 Memory cells and semiconductor devices including ferroelectric materials Physics 6 Active
US9697881B2 Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitors Physics 5 Active
US9466660B2 Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures Electricity 4 Active
US9899072B2 Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitors Physics 3 Active
US9698343B2 Semiconductor device structures including ferroelectric memory cells Electricity 3 Active
US8940388B2 Insulative elements Emerging Cross-Sectional Technologies 3 Active
US10403630B2 Semiconductor devices including ferroelectric materials Electricity 3 Active
US10177152B1 Integrated assemblies comprising stud-type capacitors Electricity 2 Active
US10811419B1 Storage node shaping Electricity 1 Active
US11145710B1 Electrode/dielectric barrier material formation and structures Electricity 1 Active
US8847196B2 Resistive memory cell Electricity 1 Active
US11289487B2 Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods Electricity 1 Active
US10062703B2 Methods of forming a ferroelectric memory cell Electricity 1 Active
US8637846B1 Semiconductor structure including a zirconium oxide material Electricity 1 Active
US12062688B2 Dielectric materials, capacitors and memory arrays Electricity 0 Active
US10438643B2 Devices and apparatuses including asymmetric ferroelectric materials, and related methods Physics 0 Active
US11251261B2 Forming a barrier material on an electrode Electricity 0 Active
US12167610B2 Semiconductor devices including ferroelectric materials Electricity 0 Active
US12046658B2 Electrode formation Electricity 0 Active
US10964536B2 Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio Electricity 0 Active
US11417661B2 Integrated assemblies comprising stud-type capacitors Electricity 0 Active
US9576805B2 Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.