Sensitivity improvement of optical and SEM defection inspection
US12066763B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2021 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Apr 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A characterization system for inspecting or performing metrology on a layer within a semiconductor stack is disclosed. The system includes an imaging sub-system configured to acquire image data from a semiconductor stack including one or more layers. The semiconductor stack includes a metal layer having a thickness between 0.5 and 10 nm deposited on a layer of the semiconductor stack to form a reflective surface on the layer. The system includes a controller. The controller is configured to receive image data of the reflective surface on the layer of the substrate stack and identify one or more defects or one or more structures within the layer based on illumination reflected from the reflective surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.