Metal loss prevention using implantation
US12068195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2023 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Jun 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.