Patent · US Active

Method for wafer bonding and compound semiconductor wafer

US12068296B2 · kind B2 · utility

0Cited by

0References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stefan Hampl · Dresden, DE
Marco Haubold · Dresden, DE
Kerstin Kaemmer · Radebeul, DE
Norbert Thyssen · Dresden, DE

Key dates

Filing date	Jan 25, 2022
Grant date	Aug 20, 2024
Priority date	—
Expiry date	Jun 8, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/01
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.