Sense line and cell contact for semiconductor devices

US12069848B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Kuo-Chen Wang · Boise, US
• Terrence B. McDaniel · Boise, US
• Russell A. Benson · Boise, US
• Vinay Nair · Boise, US

Key dates

• Filing date: Apr 26, 2022
• Grant date: Aug 20, 2024
• Expiry date: Aug 25, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/50

Abstract

Methods, apparatuses, and systems related to a sense line and cell contact for a semiconductor structure are described. An example apparatus includes a first source/drain region and a second source/drain region, where the first source/drain region and the second source/drain region are separated by a channel, a gate opposing the channel, a sense line material coupled to the first source/drain region by a cell contact, where the cell contact is made from a combination of a first polysilicon material and a second polysilicon material, and a storage node coupled to the second source/drain region.