Precursors and methods for preparing silicon-containing films
US12071688B2 · kind B2 · utility
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Key dates
| Filing date | Mar 26, 2021 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Apr 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.