Inventor · Danbury, CT, US

Bryan C. Hendrix

95Patents
17h-index
78Co-inventors
87Inventor score

Filing activity: Oct 31, 1996 → Sep 28, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8821640B2 Solid precursor-based delivery of fluid utilizing controlled solids morphology Chemistry; Metallurgy 514 Active
US9337054B2 Precursors for silicon dioxide gap fill Electricity 426 Active
US6120846A Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition Electricity 57 Expired
US6869638B2 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same Electricity 53 Expired
US6010744A Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films Emerging Cross-Sectional Technologies 42 Expired
US7838329B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films Electricity 41 Active
US7005392B2 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same Electricity 37 Expired
US7531679B2 Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride Electricity 33 Expired
US6156623A Stress control of thin films by mechanical deformation of wafer substrate Electricity 25 Expired
US7285308B2 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium Chemistry; Metallurgy 24 Expired
US6204158A Reduced diffusion of a mobile specie from a metal oxide ceramic into the substrate Electricity 19 Expired
US6133051A Amorphously deposited metal oxide ceramic films Electricity 19 Expired
US7713346B2 Composition and method for low temperature deposition of silicon-containing films Electricity 19 Active
US6350643B1 Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom Electricity 18 Expired
US7786320B2 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride Electricity 18 Active
US6900498B2 Barrier structures for integration of high K oxides with Cu and Al electrodes Electricity 18 Expired
US7446217B2 Composition and method for low temperature deposition of silicon-containing films Electricity 17 Expired
US6514835B1 Stress control of thin films by mechanical deformation of wafer substrate Electricity 16 Expired
US7005303B2 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices Electricity 15 Expired
US8008117B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films Electricity 14 Active
US6623656B2 Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same Chemistry; Metallurgy 14 Expired
US7887883B2 Composition and method for low temperature deposition of silicon-containing films Electricity 13 Active
US8236097B2 Composition and method for low temperature deposition of silicon-containing films Electricity 13 Active
US6303391A Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices Electricity 13 Expired
US6340386B1 MOCVD of SBT using toluene based solvent system for precursor delivery Emerging Cross-Sectional Technologies 12 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.