Optoelectronic device with light-emitting diodes a doped region of which incorporates an external segment based on aluminium and gallium nitride
US12074191B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2020 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Jul 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
Abstract
An optoelectronic device includes a substrate and wire-shaped light-emitting diodes the wire shape of which is elongate along a longitudinal axis. Each light-emitting diode has a doped first region including, over all or some of its height measured along the longitudinal axis, of a central first segment that is substantially elongate along the longitudinal axis, this segment being based on gallium nitride, and of an external second segment, this segment being based on aluminium and gallium nitride. The second segment includes an external first portion arranged laterally around the first segment (121), all or some of the first portion having a first average atomic concentration of aluminium, and of a lower second portion arranged at least between the first portion of the second segment and the substrate, the second portion having a second average atomic concentration of aluminium being electrically insulating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.