Metal-doped boron films
US12077852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2021 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Dec 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.