Recessed gate strcutre with protection layer
US12080773B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 15, 2022 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Apr 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A recessed gate structure includes a recessed structure, wherein the recessed structure comprises a substrate with the recess extending into the substrate from a topmost surface of the substrate; a conductive feature, filled in the recess of the recessed structure; a first functional layer, extending between the conductive feature and the recessed structure, and comprising a first element; a second functional layer, extending between the first functional layer and the conductive feature, and comprising a second element; and an interfacial layer, extending along an interface between the first functional layer and the second functional layer, and comprising the first element and the second element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.