Dongfei Pei
5Patents
1h-index
11Co-inventors
40Inventor score
Filing activity: May 23, 2017 → Jun 17, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10157833B1 | Via and skip via structures | Electricity | 1 | Active |
| US11695052B2 | III-Nitride transistor with a cap layer for RF operation | Electricity | 0 | Active |
| US10090150B2 | Low dielectric constant (low-k) dielectric and method of forming the same | Electricity | 0 | Active |
| US11876130B2 | III-nitride transistor with a modified drain access region | Electricity | 0 | Active |
| US12080807B2 | III-nitride diode with a modified access region | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.