Patent · US Active

Three-dimensional memory device and method for forming the same

US12082407B2 · kind B2 · utility

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19Claims

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Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Yuancheng Yang · Hubei, CN
Wenxi Zhou · 红钢城街道, CN
Zhiliang Xia · 红钢城街道, CN
Wei Liu · 红钢城街道, CN

Key dates

Filing date	Sep 23, 2021
Grant date	Sep 3, 2024
Priority date	—
Expiry date	Nov 6, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D88/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A three-dimensional (3D) memory device includes a first substrate, a first semiconductor structure, and a second semiconductor structure. The first semiconductor structure is disposed on the first substrate. The first semiconductor structure includes a second substrate, and a peripheral device disposed over the second substrate, and the peripheral device is formed facing the first substrate. The second semiconductor structure is disposed on the first semiconductor structure. The second semiconductor structure includes a doped semiconductor layer, and a memory array structure disposed between the doped semiconductor layer and the first semiconductor structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.