Substrate processing apparatus
US12087598B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2018 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Sep 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67757
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.