Semiconductor devices and methods of manufacturing semiconductor devices
US12087760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2022 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Dec 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/859
Abstract
In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.