Deep trench isolation with field oxide
US12087813B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2021 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Aug 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.