Three-dimensional memory devices with channel structures having plum blossom shape

US12089405B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Wanbo Geng · 红钢城街道, CN
• Lei Xue · 红钢城街道, CN
• Xiaoxin Liu · 红钢城街道, CN
• Tingting Gao · 红钢城街道, CN
• Weihua Cheng · Hubei, CN

Key dates

• Filing date: Oct 30, 2020
• Grant date: Sep 10, 2024
• Expiry date: Feb 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/10

Abstract

Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate and a channel structure extending vertically above the substrate and having a plum blossom shape including a plurality of petals in a plan view. The channel structure includes a plurality of semiconductor channels in the plurality of petals, respectively.