Non-volatile memory with zone based program speed adjustment
US12094546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2022 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Jul 11, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In order to decrease the width of threshold voltage distributions of programmed memory cells without unreasonably increasing the time needed to complete programming, a non-volatile memory uses a zone based program speed adjustment. The non-volatile memory starts programming a first set of the non-volatile memory cells until a minimum number of memory cells of the first set of non-volatile memory cells reach a first threshold voltage. In response to the minimum number of memory cells reaching the first threshold voltage, the first set of non-volatile memory cells are categorized into zones/groups based on threshold voltage. The speed of programming is then adjusted differently for each zone/group and programming is completed for the first set of non-volatile memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.