Inventor · Santa Clara, CA, US

Yi Song

21Patents
1h-index
18Co-inventors
50Inventor score

Filing activity: Apr 1, 2010 → Jul 27, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8035456B1 Multi-phase signal generator and voltage-controlled oscillator thereof Electricity 3 Active
US11423996B1 Memory apparatus and method of operation using triple string concurrent programming during erase Physics 1 Active
US12147695B2 Non-volatile memory with adapting erase process Physics 1 Active
US11955184B2 Memory cell group read with compensation for different programming speeds Physics 1 Active
US11894071B2 Non-volatile memory with differential temperature compensation for bulk programming Physics 1 Active
US11935593B2 Dummy cell resistance tuning in NAND strings Physics 1 Active
US12100461B2 Non-volatile memory with suspension period during programming Physics 0 Active
US12154630B2 Non-volatile memory with tuning of erase process Physics 0 Active
US12148489B2 Early detection of programming failure for non-volatile memory Physics 0 Active
US12431203B2 Memory program-verify with adaptive sense time based on row location Physics 0 Active
US12105963B2 NAND string read voltage adjustment Physics 0 Active
US11972805B2 Non-volatile memory with narrow and shallow erase Physics 0 Active
US12119065B2 Non-volatile memory with zoned control for limiting programming for different groups of non-volatile memory cells Electricity 0 Active
US11791001B2 Non-volatile memory with updating of read compare voltages based on measured current Electricity 0 Active
US12094546B2 Non-volatile memory with zone based program speed adjustment Physics 0 Active
US11342033B1 Look neighbor ahead for data recovery Physics 0 Active
US11972812B2 Non-volatile memory with data refresh based on data states of adjacent memory cells Physics 0 Active
US12094537B2 Non-volatile memory with differential temperature compensation for super page programming Physics 0 Active
US12087373B2 Non-volatile memory with optimized erase verify sequence Physics 0 Active
US11887674B2 Utilizing data pattern effect to control read clock timing and bit line kick for read time reduction Physics 0 Active
US12406743B2 Non-volatile memory with smart control of overdrive voltage Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.