Patent · US Active

Methods for filling a gap and related systems and devices

US12094769B2 · kind B2 · utility

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18Claims
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Key dates

Filing dateNov 19, 2021
Grant dateSep 17, 2024
Priority date
Expiry dateAug 13, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76877
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.