Method for manufacturing semiconductor device
US12094784B2 · kind B2 · utility
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10References
20Claims
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Key dates
| Filing date | Jul 28, 2023 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Jul 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a semiconductor fin over a substrate; forming an isolation feature adjacent semiconductor fin; recessing the isolation feature to form a recess; forming a metal-containing compound mask in the recess; depositing a stress layer over the metal-containing compound mask, such that the stress layer is in contact with a top surface of the metal-containing compound mask; and annealing the metal-containing compound mask when the stress layer is in contact with the top surface of the metal-containing compound mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.