Method of patterning a substrate using a sidewall spacer etch mask
US12099299B2 · kind B2 · utility
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2References
10Claims
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Assignee
Inventors
Key dates
| Filing date | Jul 18, 2023 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | Jul 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for patterning a substrate in which a patterned photoresist structure can be formed on the substrate, the patterned photoresist structure having a sidewall. A conformal layer of spacer material can be deposited on the sidewall. The patterned photoresist structure can then be removed from the substrate, leaving behind the spacer material. Then, the substrate can be directionally etched using the sidewall spacer as an etch mask to form the substrate having a target critical dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.