Non-volatile memory with programmable resistance non-data word line
US12099728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2022 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | Nov 3, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In order to lower the peak and average current through the channel (thereby lowering peak and average power consumption) during program-verify, which exhibits a word line dependency, the inventors propose to program dummy memory cells connected to a dummy word line before programming data memory cells connected to a data word line. The additional resistance in the NAND string introduced by the preprogrammed dummy memory cells will cause the peak current, and power consumption, to be lower. To address the word line dependency, the dummy memory cells connected to the dummy word line can be programmed to different threshold voltages based on which data word line is to be programmed. Thus, prior to programming data non-volatile memory cells connected to a particular data word line, the dummy memory cells are programmed to a threshold voltage that is chosen based on the position of the particular data word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.