Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devices
US12100437B2 · kind B2 · utility
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Key dates
| Filing date | Aug 24, 2021 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | Aug 20, 2042 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y25/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction includes at least one free layer, at least one reference layer, and at least one tunnel barrier separating the free layer and the reference layer, wherein the free layer is an inhomogeneous granular layer including at least two grains, each grain of the at least two grains being sensibly magnetically decoupled from the other adjacent grains of the at least two grains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.