Crystalline bottom electrode for perovskite capacitors and methods of fabrication

US12100731B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Kaan Oguz · Beaverton, US
• I-Cheng Tung · Hillsboro, US
• Chia-Ching Lin · Daxi District, TW
• Sou-Chi Chang · Portland, US
• Matthew V. Metz · Portland, US
• Uygar E. Avci · Portland, US

Key dates

• Filing date: Jun 26, 2020
• Grant date: Sep 24, 2024
• Expiry date: Nov 11, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A capacitor device, such as a metal insulator metal (MIM) capacitor includes a seed layer including tantalum, a first electrode on the seed layer, where the first electrode includes at least one of ruthenium or iridium and an insulator layer on the seed layer, where the insulator layer includes oxygen and one or more of Sr, Ba or Ti. In an exemplary embodiment, the insulator layer is a crystallized layer having a substantially smooth surface. A crystallized insulator layer having a substantially smooth surface facilitates low electrical leakage in the MIM capacitor. The capacitor device further includes a second electrode layer on the insulator layer, where the second electrode layer includes a second metal or a second metal alloy.