Threshold voltage adjustment using adaptively biased shield plate
US12100740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2023 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | Jul 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.