Manufacturing method of semiconductor structure
US12107002B2 · kind B2 · utility
0Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2023 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Oct 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.