Semiconductor device having semiconductor device elements in a semiconductor layer

US12107130B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ingo Muri · Villach, AT
• Johannes Baumgartl · Arnoldstein, AT
• Oliver Hellmund · Straubing, DE
• Jacob Tillmann Ludwig · Villach, AT
• Iris Moder · Villach, AT
• Thomas Neidhart · Klagenfurt, AT
• Gerhard Schmidt · Graz, AT
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Apr 21, 2021
• Grant date: Oct 1, 2024
• Expiry date: Sep 15, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor substrate having a first dopant and a second dopant. A covalent atomic radius of a material of the semiconductor substrate is i) larger than a covalent atomic radius of the first dopant and smaller than a covalent atomic radius of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than the covalent atomic radius of the second dopant. The semiconductor device further includes a semiconductor layer on the semiconductor substrate and semiconductor device elements in the semiconductor layer. A vertical concentration profile of the first dopant decreases along at least 80% of a distance between an interface of the semiconductor substrate and the semiconductor layer to a surface of the semiconductor substrate opposite to the interface.