Composition for semiconductor processing and method of fabricating semiconductor device using the same
US12110421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2022 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Jan 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a composition for semiconductor processing including abrasive particles and at least one additive. The composition may exhibit excellent polishing performance by being applied to a process of polishing a semiconductor wafer, may minimize defects in a polishing target surface, may achieve flat polishing without a difference in flatness between a plurality of different layers when used to polish the externally exposed surfaces of the layers, and may be applied to polishing of the surface of a semiconductor wafer having a through silicon via (TSV). Also provided is a method of fabricating a semiconductor device using the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.