Method of manufacturing integrated circuit device using a metal-containing photoresist composition
US12112948B2 · kind B2 · utility
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6References
12Claims
0Family size
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Key dates
| Filing date | Aug 18, 2020 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Mar 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02057
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.