Etching method, substrate processing apparatus, and substrate processing system
US12112954B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 28, 2021 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Jan 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.