Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
US12112983B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2020 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Feb 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrode structure for a device, such as a GaN or AlGaN device is described. In one example, a method to form the structure includes providing a substrate including gallium nitride material, forming an insulating layer over a surface of the substrate, forming an opening in the insulating layer to expose a surface region of the substrate, depositing a barrier metal layer over the insulating layer and onto the surface region of the substrate through the opening, and depositing a conducting metal layer over the barrier metal layer. In one case, the barrier metal layer includes a layer of tungsten nitride. The layer of tungsten nitride is deposited over the insulating layer and onto the surface region of the substrate using atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.