Semiconductor device with a core-shell feature and method for forming the same
US12113113B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2021 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Nov 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.