Polishing composition for semiconductor process and method for manufacturing semiconductor device by using the same
US12116503B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | May 1, 2022 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Jan 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present disclosure relates to a polishing composition for a semiconductor process that may increase a polishing rate of a boron-doped polysilicon layer, improve polishing selectivity, prevent a defect of a wafer that may occur in a polishing process, and improving surface roughness of the wafer, and a method for polishing a substrate by using the same. In addition, the present disclosure relates to a method for manufacturing a polished substrate by using a polishing composition for a semiconductor process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.