Composition for etching, method for etching insulator and method for manufacturing semiconductor device, and novel compounds
US12116520B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 14, 2021 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Mar 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1:wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.