Write method for differential resistive memories
US12119059B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Nov 20, 2022 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | May 11, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for writing a data word to a resistive memory consisting of 2T2R differential cells each having first and second sets of a resistor (R) and a selection transistor (T). The method includes generating an initial codeword, programming it in 1T1R mode, checking its programming in 1T1R mode, inverting it, programming the inverted initial codeword in 1T1R mode, checking its programming in 1T1R mode, and reading, in 2T2R differential mode, that the read data correspond to said initial data. A device designed to implement this write method and to an electronic system including this device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.