WEEBIT NANO LTD
17Patents
17Active
17Granted
60Portfolio score
Filing activity: Jun 11, 2020 → Dec 18, 2024
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12033698B2 | Method for resetting an array of resistive memory cells | Physics | 1 | Active |
| US12040017B2 | Current and voltage limit circuitry for resistive random access memory programming | Physics | 1 | Active |
| US12170110B2 | Silicon-on-insulator (SOI) circuitry for low-voltage memory bit-line and word-line decoders | Physics | 0 | Active |
| US12068028B2 | Circuitry for parallel set and reset of resistive random-access memory (ReRAM) cells | Physics | 0 | Active |
| US12131777B2 | Resistive random-access memory (ReRAM) cell optimized for reset and set currents | Physics | 0 | Active |
| US11659720B2 | Silicon over insulator two-transistor one-resistor in-series resistive memory cell | Physics | 0 | Active |
| US12349605B2 | Method for manufacturing an OxRAM type resistive memory cell | Electricity | 0 | Active |
| US12052876B2 | Memory comprising a matrix of resistive memory cells, and associated method of interfacing | Physics | 0 | Active |
| US12347487B2 | Current and voltage limit circuitry for resistive random access memory programming | Physics | 0 | Active |
| US12119059B2 | Write method for differential resistive memories | Physics | 0 | Active |
| US12165706B2 | Method for resetting an array of resistive memory cells | Physics | 0 | Active |
| US12414485B2 | Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell | Electricity | 0 | Active |
| US11538524B2 | Silicon over insulator two-transistor two-resistor in-series resistive memory cell | Physics | 0 | Active |
| US12406724B2 | Resistive memory with selector, equipped with a write capacitor, and associated writing method | Electricity | 0 | Active |
| US12349609B2 | Low forming voltage OxRAM memory cell, and associated method of manufacture | Electricity | 0 | Active |
| US12224007B2 | Method for determining a manufacturing parameter of a resistive random access memory cell | Electricity | 0 | Active |
| US12087360B2 | Method for programming an array of resistive memory cells | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.