Method of manufacturing capacitor structure
US12125642B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2023 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Mar 31, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/03
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a capacitor structure includes the following. A first, second, third, fourth, fifth, sixth and seventh portions of a contact layer arrange from periphery to center. A first-conductive layer contacting the first portion forms in an opening. A first-dielectric layer contacting the second portion forms on the first-conductive layer. A second-conductive layer forms on the first-dielectric layer. A second-dielectric layer contacting the third portion forms on the second-conductive layer. A third-conductive layer contacting the fourth portion forms on the second-dielectric layer. A third-dielectric layer contacting the fifth portion forms on the third-conductive layer. A fourth-conductive layer contacting the second-conductive layer forms on the third-dielectric layer. A fourth-dielectric layer contacting the sixth portion forms on the fourth-conductive layer. A fifth-conductive layer contacting the seventh portion forms on the fourth-dielectric layer. A fifth-dielectric layer forms on the fourth-dielectric layer and the fifth-conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.